Abstract
The problem of SiC precipitation during micro-pulling-down growth of Si–Ge mixed crystals has been analyzed as an important constraint of the technique. Three mechanisms of SiC microcrystal formation have been discussed. The solute transport in the melt and the dependence of the rate of Si–Ge melt evaporation on melt composition have been investigated. The troublesome influence of CO on SiC formation has been reduced by modification of the micro-pulling-down (µ-PD) growth assembly with optimization of argon flow. As a result the effective lifespan of the crucible was increased at least fivefold.