Brought to you by:

A Clean GaP(001)4×2/c(8×2) Surface Structure Studied by Scanning Tunneling Microscopy and Ion Scattering Spectroscopy

, , and

Copyright (c) 1996 The Japan Society of Applied Physics
, , Citation Masamichi Naitoh Masamichi Naitoh et al 1996 Jpn. J. Appl. Phys. 35 4789 DOI 10.1143/JJAP.35.4789

1347-4065/35/9R/4789

Abstract

We report the results of scanning tunneling microscopy and ion scattering spectroscopy investigation on the structure of GaP(001)4×2/c(8×2) surfaces prepared by ion bombardment and annealing methods. We found that the unit cell of the 4×2 structure consists of two Ga dimers with two dimer vacancies and that the atomic separation in the Ga dimer is about 0.27 ±0.01 nm.

Export citation and abstract BibTeX RIS

Please wait… references are loading.
10.1143/JJAP.35.4789