Metalorganic Vapor Phase Epitaxial Growth of Lithium-Doped ZnS

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Copyright (c) 1990 The Japan Society of Applied Physics
, , Citation Iwao Mitsuishi et al 1990 Jpn. J. Appl. Phys. 29 L733 DOI 10.1143/JJAP.29.L733

1347-4065/29/5A/L733

Abstract

Lithium-doped ZnS epitaxial layers have been grown on GaAs substrates by metalorganic vapor phase epitaxy, using cyclopentadienyllithium as the dopant. Low-temperature photoluminescence spectra have shown the presence of lithium acceptors in the grown layers. The electrical resistivity decreased with increasing sublimation temperature of lithium dopant. The lowest resistivity achieved was about 4×102 Ω·cm and the highest p-type carrier concentration was 7.5×1015 cm-3.

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10.1143/JJAP.29.L733