Abstract
Thin films of metastable alloy GexSn1-x(0≦x≦1) are formed by chemical sputtering in H2 on glass and semiconducting crystalline substrates. X-ray diffraction indicates the formation of microcrystalline GexSn1-x alloy films with a diamond structure. GexSn1-x films deposited on InSb(x=0) and GaSb(x=0.47) substrates with lattice matches consist of polycrystals and are shown to have a crystal orientation nearly aligned to the substrate by RHEED observations. The chemical sputtering technique is appropriate for synthesizing GexSn1-x alloys which might have potential as direct and narrow band gap materials.