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Minority Carrier Diffusion Length in Amorphous Si Schottky Barrier Solar Cells

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Copyright (c) 1980 The Japan Society of Applied Physics
, , Citation Makoto Konagai et al 1980 Jpn. J. Appl. Phys. 19 1923 DOI 10.1143/JJAP.19.1923

1347-4065/19/10/1923

Abstract

It is proposed that the low fill factor in a·Si solar cells is due to the field-dependent photocurrent collection. The photocurrent dependence on the width of the depletion region has been theoretically analyzed as a function of the hole diffusion length Lp. The analysis showed that Lp is not larger than 0.05 µm, and also that the depletion width at zero bias under AMI illumination is in the range 0.15-0.30 µm.

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10.1143/JJAP.19.1923