Abstract
We demonstrate metal–oxide–semiconductor field-effect transistors (MOSFETs) with small subthreshold swing (SS). The MOSFETs have a nanowire channel and three gates. A parasitic bipolar transistor formed in a fully depleted silicon-on-insulator MOSFET applies body bias to the MOSFET's channel and thus reduces the SS. Additionally, triple-gate operation makes the drain voltage smaller and provides current characteristics with a high on/off ratio and small hysteresis. As a result, SSs of the n- and p-type MOSFETs reach 6.6 and 5.2 mV/dec, respectively, in the range of current of six orders of magnitude. These features promise MOSFETs with low power consumption.
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