Zero-Field Spin Torque Oscillator Based on Magnetic Tunnel Junctions with a Tilted CoFeB Free Layer

Witold Skowroński; Tomasz Stobiecki; Jerzy Wrona; Günter Reiss; Sebastiaan van Dijken

doi:10.1143/APEX.5.063005

Applied Physics Express

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Zero-Field Spin Torque Oscillator Based on Magnetic Tunnel Junctions with a Tilted CoFeB Free Layer

Witold Skowroński, Tomasz Stobiecki, Jerzy Wrona, Günter Reiss¹ and Sebastiaan van Dijken²

Published 28 May 2012 • ©2012 The Japan Society of Applied Physics
Applied Physics Express, Volume 5, Number 6

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Author affiliations

Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków, Poland

¹ Thin Films and Physics of Nanostructures, Bielefeld University, 33615 Bielefeld, Germany

² NanoSpin, Department of Applied Physics, Aalto University School of Science, P. O. Box 15100, FI-00076 Aalto, Finland

Dates

Received 6 April 2012
Accepted 10 May 2012
Published 28 May 2012

Citation

Witold Skowroński et al 2012 Appl. Phys. Express 5 063005

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DOI

https://doi.org/10.1143/APEX.5.063005

PACS

84.30.Sk, 75.50.Bb, 85.75.Dd

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Abstract

Microwave emission from spin torque oscillators based on CoFeB/MgO/CoFeB magnetic tunnel junctions is analyzed with respect to the thickness of the magnetically free electrode. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and reference layers and the perpendicular interface anisotropy of thin CoFeB electrodes on MgO, we demonstrate that large-amplitude oscillations of the tilted CoFeB free layer can be generated in zero applied magnetic field.

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