Abstract
We investigated electron beam (EB) lithography using a novel highly sensitive negative type of plant-based resist material derived from biomass on a hardmask layer for trilayer processes. The chemical design concept for using the plant-based resist material with glucose and dextrin derivatives was first demonstrated in the EB lithography. The 1 µm line patterning images with highly efficient crosslinking properties and low film thickness shrinkage were provided under specific process conditions of EB lithography. The results shown reveal that the alpha-linked disaccharide formed by a 1,1-glucoside bond between two glucose units in dextrin derivatives was an important factor in controlling the highly sensitive EB patterning and developer properties.