Blue-Light-Emitting Ambipolar Field-Effect Transistors Using an Organic Single Crystal of 1,4-Bis(4-methylstyryl)benzene

Hajime Nakanotani; Ryota Kabe; Masayuki Yahiro; Taishi Takenobu; Yoshihiro Iwasa; Chihaya Adachi

doi:10.1143/APEX.1.091801

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Blue-Light-Emitting Ambipolar Field-Effect Transistors Using an Organic Single Crystal of 1,4-Bis(4-methylstyryl)benzene

Hajime Nakanotani¹, Ryota Kabe¹, Masayuki Yahiro¹, Taishi Takenobu², Yoshihiro Iwasa² and Chihaya Adachi¹

Published 29 August 2008 • ©2008 The Japan Society of Applied Physics
Applied Physics Express, Volume 1, Number 9 Citation Hajime Nakanotani et al 2008 Appl. Phys. Express 1 091801

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¹ Center for Future Chemistry, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan

² Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Dates

Received 20 July 2008
Accepted 8 August 2008
Published 29 August 2008

DOI

https://doi.org/10.1143/APEX.1.091801

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Abstract

An ambipolar light-emitting organic field-effect transistor (LE-OFET) based on a 1,4-Bis(4-methylstyryl)benzene (BSB-Me) single crystal was developed. The BSB-Me single crystal has very high photoluminescence quantum efficiency (Φ_PL) of 89±2%, while Φ_PL of the BSB-Me vapor-deposited film is limited to a much lower value of 54±2%. Ambipolar operation with successive blue electroluminescence from the FETs based on the BSB-Me single crystals was demonstrated by realizing nearly equal electron and hole mobilities [about 0.005 cm²/(V s)] with asymmetric gold–calcium contacts. Since BSB-Me single crystals can perform light amplification, the BSB-Me-based ambipolar LE-OFET is a promising candidate for future electrically driven organic blue-emitting solid-state lasers.

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