Abstract
Platinum film growth using thermal evaporation method was studied using molecular dynamics simulation. This platinum film was intended as catalyst film for graphene growth. Tersoff, Eam and Lennard-Jones potential were used to describe interaction of Si-Si, Pt-Pt and Pt-Si respectively. Deposition process was performed with low incident energy to represent thermal evaporation method. Our simulation found that heating temperature at 400 K produced platinum film with higher percentage of crystal structure than other heating condition 300K, 500K & 600K. We also found transition phase from fcc to bcc at 600K.
Export citation and abstract BibTeX RIS
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.