Analysis of internal structure in large IIb-type high pressure-high temperature (HPHT) synthetic single-crystal diamond are presented. The concentration of boron impurity in different growth sectors varies from 0.02 to 10.3 ppm. It is shown that in the manufacturing of synthetic diamond plates, internal inhomogeneities of the diamond should be taken into account; plates with different characteristics can be cut from one diamond, each of which can be used for its own purpose.
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