Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction

Andris Voitkans; Lauris Dimitrocenko; Peteris Kulis; Stephan Bartling; Ingo Barke; Karl-Heinz Meiwes-Broer; Ivars Tale

doi:10.1088/1757-899X/23/1/012038

IOP Conference Series: Materials Science and Engineering

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Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction

Andris Voitkans¹, Lauris Dimitrocenko¹, Peteris Kulis¹, Stephan Bartling², Ingo Barke², Karl-Heinz Meiwes-Broer² and Ivars Tale¹

Published under licence by IOP Publishing Ltd
IOP Conference Series: Materials Science and Engineering, Volume 23, Annual Conference on Functional Materials and Nanotechnologies – FM&NT 2011 5–8 April 2011, Riga, Latvia Citation Andris Voitkans et al 2011 IOP Conf. Ser.: Mater. Sci. Eng. 23 012038 DOI 10.1088/1757-899X/23/1/012038

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¹ Institute of Solid State Physics, University of Latvia, Latvia

² Institut für Physik, Universität Rostock, Germany

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Abstract

Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on sapphire substrates, via metal organic chemical vapor deposition (MOCVD). We present ex situ investigations on orientation and structure of grown GaN nanowires on GaN(0001) surface using reflection high energy electron diffraction (RHEED). Both ordered and randomly oriented GaN crystalline structures have been detected.

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Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction

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