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Influence of light on electrophysical properties of thin films of mixed zinc and tin oxides

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, , Citation V V Petrov et al 2021 IOP Conf. Ser.: Mater. Sci. Eng. 1035 012033 DOI 10.1088/1757-899X/1035/1/012033

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drerozhko@mail.ru

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1 Department of Technosphere Safety and Chemistry, Institute of Nanotechnologies, Electronics, and Equipment Engineering, Southern Federal University, 2 Shevchenko str., Taganrog 347922, Russia

2 Department of General and Inorganic Chemistry, Southern Federal University, 7 R. Zorge st., Rostov-on-Don 344006, Russia

3 Department of Nanotechnology and Microsystems, Institute of Nanotechnologies, Electronics, and Equipment Engineering, Southern Federal University, 2 Shevchenko str., Taganrog 347922, Russia

4 Problem Scientific and Research Laboratory "Nanobiotechnology and new Materials", Institute of Nanotechnologies, Electronics, and Equipment Engineering, Southern Federal University, 2 Shevchenko str., Taganrog 347922, Russia

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1757-899X/1035/1/012033

Abstract

In this work, we studied structural and the electrical properties of thin films of mixed zinc and tin oxides obtained by low-temperature pyrolysis. XRD analysis shows that the obtained films contain phases of zinc oxide and tin dioxide and have nanocrystalline structure with crystallite size about 10-17 nm. A significant effect of daylight on the temperature dependences of the film resistance was established. The temperature dependences of the resistance of ZnO-SnO2 films, measured in the range from room temperature to 300 °C, show the difference between the heating and cooling curves, that can be explained by two competing processes - thermal activation mechanism of conductivity and adsorption-desorption of oxygen particles on the surface of the oxide film. Using the slope of the linear section on the plots, we calculated the activation energy of conductivity, which amount is 0.7 and 1.1 eV for the samples with the different Zn:Sn ratio.

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10.1088/1757-899X/1035/1/012033