Abstract
In highly efficient halide perovskite solar cells (PSCs), nickel oxide (NiOx) have been widely used as an inorganic hole transport layer (HTL). However, the solution-processed NiOx films always have pinholes, along with inferior contact with perovskite layer. Herein, a surfactant of hexadecylbenzene (HAB) was applied to improve the hole extraction from perovskite to NiOx HTL. With the modification of HAB, a high quality perovskite layer was obtained. Due to the enhanced hole extraction, the HAB modified device showed a higher short-circuit current density (JSc) and a power conversion efficiency of 17.11%. Therefore, this work offers a novel strategy in interfacial engineering for high-efficiency PSCs.
Export citation and abstract BibTeX RIS
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.