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Radiation hardness of a p-channel notch CCD developed for the X-ray CCD camera onboard the XRISM satellite

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Published 5 April 2019 © 2019 IOP Publishing Ltd and Sissa Medialab
, , The 9th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging Citation Y. Kanemaru et al 2019 JINST 14 C04003DOI 10.1088/1748-0221/14/04/C04003

1748-0221/14/04/C04003

Abstract

We report the radiation hardness of a p-channel CCD developed for the X-ray CCD camera onboard the XRISM satellite. This CCD has basically the same characteristics as the one used in the previous Hitomi satellite, but newly employs a notch structure of potential for signal charges by increasing the implant concentration in the channel . The new device was exposed up to approximately 7.9 × 1010 protons cm−2 at 100 MeV . The charge transfer inefficiency was estimated as a function of proton fluence with an 55Fe source. A device without the notch structure was also examined for comparison. The result shows that the notch device has a significantly higher radiation hardness than those without the notch structure including the device adopted for Hitomi. This proves that the new CCD is radiation tolerant for space applications with a sufficient margin.

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10.1088/1748-0221/14/04/C04003
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