Abstract
We study the transient Fano resonance of a semiconductor Si observed in the early time region of coherent phonon generation induced by an ultrafast pump laser. We particularly examine effects of the detuning on the transient Fano resonance, where the detuning is de ned by the difference between the central frequency of the pump laser and the band gap. It is clari ed that asymmetric pro les of transient induced photoemission spectra, implying the Fano resonance, strongly depend on the detuning. This is attributed to energetically adjacent bosonic states, whose energy levels are strongly in uenced by the detuning.
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