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Optical properties of GaAs/AlGaAs double quantum wells in lateral electric field

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Published under licence by IOP Publishing Ltd
, , Citation M Ya Vinnichenko et al 2016 J. Phys.: Conf. Ser. 741 012149 DOI 10.1088/1742-6596/741/1/012149

1742-6596/741/1/012149

Abstract

The influence of the lateral electric field on the mid-infrared intersubband light absorption and near-infrared interband photoluminescence is experimentally investigated in tunnel-coupled GaAs/AlGaAs quantum wells. Absorption and emission modulation in lateral electric field are related to the electron heating and redistribution of hot electrons between the quantum well states resulting in variation of the space charge in the structure.

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10.1088/1742-6596/741/1/012149