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1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability

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, , Citation F I Zubov et al 2016 J. Phys.: Conf. Ser. 741 012109 DOI 10.1088/1742-6596/741/1/012109

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1 St Petersburg Academic University, St Petersburg 194021, Russia

2 Peter the Great St.Petersburg Polytechnic University, St Petersburg 195251, Russia

3 Ioffe Institute, St Petersburg 194021, Russia

4 DTU Fotonik, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark

5 IMEC, Kapeldreef 75, BE-3001 Leuven, Belgium

6 KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200d, BE-3001 Leuven, Belgium

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1742-6596/741/1/012109

Abstract

Temperature characteristics of InAs/InGaAsP quantum dot (QD) lasers synthesized on InP (001) substrate are presented. The lasers demonstrate high temperature stability: a threshold current characteristic temperature as high as 205 K in the temperature range between 20 to 50°C was measured. Lasing wavelength of 1.5 μm was achieved by covering QDs with 1.7 monolayers of GaAs.

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10.1088/1742-6596/741/1/012109