Abstract
InGaN/GaN nanorod structure for light emission diode fabricated by the reactive plasma etching through the self-assembled Ni nano-cluster mask is presented. Fabricated array structure, presented in the form of truncated cones with average diameter height and period of nanorods is 250±50 nm, 430nm and 650±50 nm, respectively. The side angle of single structure about 80o. EL spectrum has maximum at 460 nm.
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