Abstract
Technology for growing layers of InGaAsP solid solutions with Eg ∼⃒ 1.0 - 1.2eV on InP substrates in the spinodal decomposition region by the metalorganic vapour phase epitaxy (MOVPE) technique has been developed. Results of investigation of the obtained solid solution layers by the methods of photoluminescence, reflectance anisotropy spectroscopy and fractal analysis are presented.
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