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Growth and scintillation properties of Ce doped Gd2Si2O7/SiO2 eutectics

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, , Citation Kei Kamada et al 2015 J. Phys.: Conf. Ser. 619 012036 DOI 10.1088/1742-6596/619/1/012036

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kamada@imr.tohoku.ac.jp

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1 New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Sendai 980-8579, Japan

2 C&A corporation, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

3 Institute for Material Reseach, Tohoku University, 2-1-1, Sendai 980-8577, Japan

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1742-6596/619/1/012036

Abstract

Ce:Gd2Si2O7/SiO2 eutectic was grown by the μ-PD method. The square-shape sample with a side of 5 mm and a length of 15 mm was obtained. Two phases of orthorhombic Gd2Si2O7 and SiO2 was observed. Rod-phase was SiO2 and matrix phase was Gd2Si2O7. Ce3+ 4f5d emission have been observed at 400nm. The sample showed light yield of around 16,000 photons/MeV. Scintillation decay time was 46.3ns(21%) 249ns(79%).

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10.1088/1742-6596/619/1/012036