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Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

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, , Citation G B Sushko et al 2013 J. Phys.: Conf. Ser. 438 012018 DOI 10.1088/1742-6596/438/1/012018

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1 Frankfurt Institute for Advanced Studies, Ruth-Moufang-Str. 1, 60438 Frankfurt am Main, Germany

2 St. Petersburg State Maritime University, Leninsky ave. 101, 198262 St. Petersburg, Russia

3 On leave from A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia

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1742-6596/438/1/012018

Abstract

Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195-855 MeV.

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10.1088/1742-6596/438/1/012018