Abstract
Nowadays, the power semiconductor devices have been used in many fields like wind power generation systems, the rail transit. Bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) as well as some other devices are the dominating the market. The insulated gate bipolar transistor (IGBT) as a mixed device of the BJT and the MOSFET, has a preeminent performance. In this paper, the characteristics of the punch through IGBT (PT-IGBT), the MOSFET and the BJT will be investigated by TCAD. Then the PT-IGBT is compared with the BJT and the MOSFET, for concluding its advantages. According to the simulation result, the PT-IGBT has the on-state current of 9*10-4A and the forward blocking voltage of 1200V, which are much higher than the other two devices. In the end of the paper, the development of the semiconductor devices is predicted, about the research trends.
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