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Design and Characteristics of CMOS Inverter based on Multisim and Cadence

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Published under licence by IOP Publishing Ltd
, , Citation Haoran Xu et al 2021 J. Phys.: Conf. Ser. 2108 012034 DOI 10.1088/1742-6596/2108/1/012034

1742-6596/2108/1/012034

Abstract

Known as complementary symmetrical metal oxide semiconductor (cos-mos), complementary metal oxide semiconductor is a metal oxide semiconductor field effect transistor (MOSFET) manufacturing process, which uses complementary and symmetrical pairs of p-type and n-type MOSFETs to realize logic functions. CMOS technology is used to build integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS) and other digital logic circuits. CMOS technology is also used in analog circuits, such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for various types of communications. Based on multisim 14.0 and cadence, the characteristics and performance of CMOS inverter are studied by simulation.

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10.1088/1742-6596/2108/1/012034