Abstract
In this work we investigate the work function of gallium phosphide nanowires by the means of frequency-modulated Kelvin probe force microscopy. Polytypic wurtzite/zinc blende nanowires were synthesized via self-catalytic molecular beam epitaxy. Mixed crystal phase was achieved by controlling the catalytic droplet contact angle and confirmed via transmission electron microscopy and Raman spectroscopy. Kelvin probe study showed a contrast between the work function of (110) zinc blende and (1120) wurtzite gallium phosphide: ϕZB = 4.28 eV and ϕWZ = 4.2 eV. Also, it was shown that sub-monolayer arsenic shell increases the work function up to 4.75 eV. Thus, two mechanisms for work function adjustment in the range 4.2-4.75 eV are shown. The results are important for optimization of Schottky barriers in nanowire-based devices.
Export citation and abstract BibTeX RIS
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.