Induced electronic phenomena in crystals of p-GaSe semiconductor promising for optoelectronics

An induced impurity photoconductivity by the electric field, thermally stimulated conductivity and spontaneous pulsations of the dark current were found in the undoped (with a dark resistivity P77≈3•10⁴÷10⁸ Ω-cm at T≈77 K) and erbium doped (N_Er=10^–5÷10^–1 at.%) p-GaSe crystals in the temperature range of T≤240÷250 K at electric field strengths (E) creating a noticeable injection. It was found that the value of the observed impurity photoconductivity (M) monotonically increase at low illumination in undoped crystals with increasing P77 and its spectrum smoothly expands towards longer waves. The value of ∆i_i and the width of its spectrum change non-monotonically with increasing N_Er in doped crystal and it gets its maximum value at N_Er≈5•10^-4 at.%. The intensity of spontaneous pulsations increases with increasing E at the higher electric field strengths. However, the impurity photoconductivity and the peak of thermally stimulated conductivity gradually disappeared. The amplitude and frequency of the observed spontaneous pulsations of the dark current is increased with increasing in the injection ability of the contacts. Moreover, the pulsations of the dark current gradually disappeared with increasing T. It was shown that all these three phenomena are directly caused by the recharge of sticking levels with a depth _Er≈+0.42 eV and a density N_t≈ 10¹⁵ cm^-3 by injected holes. However, in high-resistance undoped and doped _Er≤10^-2 at.% crystals, it is also necessary to consider the presence of random macroscopic defects in the samples to explain their features. A qualitative explanation is proposed based on the obtained results.