Abstract
The photoelectric characteristic of ITO/PbS quantum dots (QDs)/Al structure based single and hybrid iodine ions(I−) passivated PbS QDs have been investigated. The ITO/PbS QDs/Al structure with hybrid I− passivation have demonstrated a high light dark ratio of 565.5 at -2V. It is the result of removing more organic ligands on the surface of PbS QDs and introducing larger amount of I−. This work demonstrates that the hybrid I− passivated process has great potential in the performance improvement of PbS QDs based photovoltaic device.
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