Statistical model of phonon scattering on rough boundaries of nanostructures

Because of the rapid development of semiconductor electronics and the tendency to size reduction of the elements of transistors, there is an urgent task of assessing the heat transfer regime, which determines the ability to maintain the required thermal regime. In this work, the heat transfer in micro- and nanostructures in silicon is considered, and a comprehensive analysis of factors determining the heat transfer regime is carried out. In particular, the effect of the interaction of phonons with the sample boundaries in the quasi-ballistic and ballistic heat transfer regimes, where these processes play a decisive role, is evaluated using statistical model of phonon scattering on rough boundaries of samples.