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Detection of inverse spin-Hall effect in Nb and Nb40Ti60 thin films

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, , Citation T Yoshino et al 2010 J. Phys.: Conf. Ser. 200 062038 DOI 10.1088/1742-6596/200/6/062038

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1 Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan

2 Department of Applied Physics and Physico-Informatics, Keio University, Yokohama 223-8522, Japan

3 PRESTO, Japan Science and Technology Agency, Sanbancho, Tokyo, 102-0075, Japan

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1742-6596/200/6/062038

Abstract

The inverse spin-Hall effect (ISHE) has been investigated using the spin pumping, spin current generation from magnetization dynamics, in Ni81Fe19/N (N = Nb and Nb40Ti60) bilayer films. We found an electromotive force due to ISHE in Ni81Fe19/N (N=Nb and Nb40Ti60) bilayer films. The experimental results show that the ISHE signal in the Ni81Fe19/Nb40Ti60 bilayer film is greater than that in the Ni81Fe19/Nb bilayer film, suggesting an important role of the impurity doping for ISHE and the spin pumping in Nb.

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10.1088/1742-6596/200/6/062038