Abstract
Mixed dielectric films of ZnS and MgF2 have been modeled in IR (3μm) band to reduce a reflectance from ZnS substrate which is around 14%. Reflectance value are enhanced starting from a mixed quarter single layer, double and triple layer as innermost and intermediate layers (quarter-quarter-quarter) and (quarter-half –quarter) ARC's. The designed layers are optimized with Zemax-EE operand to reach the target by varying their thickness and refractive indices simultaneously . The analysis has shown that the proposed mixing multilayer construction are very effective in enhancing the transmittance for ZnS.
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