Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode

In this communication, we report on electrical transport measurements of non-intentionally doped InAs/GaSb Superlattice structures grown by Molecular Beam Epitaxy. Resistivity and Hall Effect measurements were performed on two samples, corresponding to the same SL structure that has been grown on two different substrates: one on semi-insulating GaAs substrate, another on n-type GaSb substrate. To carry out the electrical measurements, the conducting GaSb substrate of the second sample has been removed. The study were performed in the temperature range 77-300K, for magnetic fields of 0.38 T. The both samples exhibited a change in type of conductivity from p-type at low temperature to n-type near room temperature.