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An artificial neural network as a predictor of electrical characteristics of nanoelectronic device channel based on a low-dimensional heterostructure

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Published under licence by IOP Publishing Ltd
, , Citation N A Vetrova et al 2020 J. Phys.: Conf. Ser. 1695 012152 DOI 10.1088/1742-6596/1695/1/012152

1742-6596/1695/1/012152

Abstract

In this paper a computational algorithm for calculating current density of low-dimensional semiconductor heterostructures based on an artificial neural network is proposed. The neural network training is performed using the quantum-mechanical model of Green's Functions.

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10.1088/1742-6596/1695/1/012152