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The effect of plasma immersion ion implantation of Ne+ or Ar+ or Kr+ on the forming voltage of the resistive switching in the structure Ni/Pt/HfO2(10nm)/TaN(5nm)/TiN

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, , Citation O O Permyakova et al 2020 J. Phys.: Conf. Ser. 1695 012009 DOI 10.1088/1742-6596/1695/1/012009

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o.permyakova@phystech.edu

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1 Laboratory of Microstructuring and Submicron Devices, Valiev Institute of Physics and Technology RAS, Moscow 117218, Russia

2 Department of Physical and Quantum Electronics, Moscow Institute of Physics and Technology (State University), Dolgoprudny 141701, Russia

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1742-6596/1695/1/012009

Abstract

The effect of ion implantation on the characteristics of resistive switching in the structure of Ni/Pt/HfO2/TaN/TiN with an oxide layer thickness of 10 nm is considered. It was shown that after implantation of Ne+ ions, the forming voltage decreases by 0.5 V, while after implantation of Ar+ ions, the share of the forming-free cells increased from 0.1 to 0.6. Resistive switching after implantation of Kr+ ions is entirely absent.

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10.1088/1742-6596/1695/1/012009