Abstract
In this letter we report measurements of conductance fluctuations in single-crystal samples of Si doped with P and B close to the critical composition of the metal-insulator transition . The measurements show that the noise, which arises from bulk sources, does not diverge as the Ioffe-Regal limit (kF l1) is approached from the metallic side. At room temperature, the magnitude of the noise shows a shallow maximum at around kF l1.5 and drops sharply as the insulating state is approached.
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