A proposal for both plasma ion- and electron-temperature diagnostics under simultaneous incidence of particles and x-rays into a semiconductor on the basis of a proposed model for a semiconductor detector response

A method is proposed for obtaining radial profiles of plasma temperatures of both plasma ion (T_i) and electron (T_e) simultaneously by the use of a semiconductor detector array. The method is based on our developed particle-response model for a semiconductor detector; in particular, the response theory is constructed for giving the applicability in particle energies ranging down to a kiloelectronvolt. Calculated results from our model are in fairly good agreement with experimental data on the detector response of incident particle beams with energies in the range 100 eV to a few kiloelectronvolts. On the basis of the verification of the proposed model, an idea of the use of a developed semiconductor detector array covered with `reliably unbreakable' ultrathin SiO<sub>2</sub> `dead-layer filters' having various nanometre-order thicknesses is applied for simultaneous T_i and T_e analyses by using charge-exchange neutral particles and x-rays from plasmas. Radial profiles of T_i and T_e are obtained in a single plasma discharge alone, and the data reliability is independently cross-checked by a radial scan of a conventional charge-exchange neutral-particle analyser system as well as a 50-channel microchannel plate x-ray diagnostics system in the GAMMA 10 tandem mirror.