The orientation independence of the CdTe-HgTe valence band offset as determined by X-ray photoelectron spectroscopy

The authors have investigated the valence band offset ( Delta E_V) of the CdTe-HgTe heterojunction for three orientations, (100), (110) and (111)B, using in situ X-ray photoelectron spectroscopy. The difference in energy between the Cd 4d and Hg 5d_5/2 core levels, Delta E_CL, and consequently Delta E_V was found to be independent of surface orientation and the surface structure immediately prior to growth of the uppermost layer. Delta E_V was found to be 0.37+or-0.07 eV.