Triple-crystal diffractometry, x-ray standing wave and reciprocal space mapping study of homoepitaxial grown Si layers

Homoepitaxial Si films have been synthesized by magnetron sputter epitaxy at substrate temperatures of 570 °C. The films have been characterized by high-resolution x-ray diffraction (HRXRD), by triple-crystal diffractometry (TCD), by x-ray standing-wave method (XSW) and by reciprocal space mapping (RSM). It is shown that for highly defective films, the information obtained from HRXRD or TCD alone might not be enough to reveal the complete film structure. With the addition of XSW and RSM, however, a comprehensive view of the investigated structure can be obtained.