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Novel planar Gunn diode operating in fundamental mode up to 158 GHz

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, , Citation Chong Li et al 2009 J. Phys.: Conf. Ser. 193 012029 DOI 10.1088/1742-6596/193/1/012029

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1 Department of Electronic and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, UK

2 School of Engineering and Physical Sciences, University of Aberdeen, Aberdeen AB24 SFX, UK

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1742-6596/193/1/012029

Abstract

We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side. Small signal measurement shows that a typical device exhibits negative resistance up to 158 GHz. Using this device structure we have demonstrated a planar Gunn oscillator working at 115.5 GHz with an output power of -28 dBm.

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10.1088/1742-6596/193/1/012029