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Metamaterial-inspired perfect tunnelling in semiconductor heterostructures

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Published 12 August 2011 Published under licence by IOP Publishing Ltd
, , Citation L Jelinek et al 2011 New J. Phys. 13 083011 DOI 10.1088/1367-2630/13/8/083011

1367-2630/13/8/083011

Abstract

In this paper, we use a formal analogy of the electromagnetic wave equation and the Schrödinger equation in order to study the phenomenon of perfect tunnelling (tunnelling with unitary transmittance) in a one-dimensional semiconductor heterostructure. Using the Kane model of a semiconductor, we show that this phenomenon can indeed exist, resembling all the interesting features of the corresponding phenomenon in classical electromagnetism in which metamaterials (substances with negative material parameters) are involved. We believe that these results can pave the way toward interesting applications in which metamaterial ideas are transferred into the semiconductor domain.

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