Propagation and interactions of cracks in Si induced by H supply into He-filled cracks

The phenomena of interaction and propagation of cracks under the contribution of hydrogen were studied in (001) silicon substrate in which an array of scattered over-pressurized He-plates was previously introduced at a given depth. Their propagation under subcritical regime was activated through diffusional supply of H atoms introduced by implantation/annealing. Interactions between the tips of non coplanar cracks take place in a nanometric scale; they can be of plastic-type leading to the formation of extended defects or of elastic-type resulting in deviations of crack-tip propagation. While the planar interactions facilitate the propagation of cracks, those of non coplanar-type stop them. The observations were carried out by transmission electron microscopy and the results were discussed and modelled by using concepts of elasticity and fracture mechanics.