Table of contents

Experimental data on quantum phase transitions in two-dimensional systems (superconductor–insulator, metal–insulator) and transitions in the conditions of integer quantum Hall effect are critically analyzed.

The basic results of the studies of defect–impurity interaction in implanted silicon are presented. Factors affecting the way in which quasichemical reactions proceed — namely, temperature, level of ionization, and internal electric and elastic-stress fields — are analyzed. Methods for suppressing residual damage effects (rodlike defects, dislocation loops), and schemes for reducing the impurity diffusivity and for gettering metallic impurities in implanted silicon are considered. Examples of the practical realization of defect-impurity engineering are presented and discussed.

Stochastic principles for constructing the process of anomalous diffusion are considered, and corresponding models of random processes are reviewed. The self-similarity and the independent-increments principles are used to extend the notion of diffusion process to the class of Levy-stable processes. Replacing the independent-increments principle with the renewal principle allows us to take the next step in generalizing the notion of diffusion, which results in fractional-order partial space–time differential equations of diffusion. Fundamental solutions to these equations are represented in terms of stable laws, and their relationship to the fractality and memory of the medium is discussed. A new class of distributions, called fractional stable distributions, is introduced.

This article describes real and gedanken experiments where one can observe unusual space-time behavior of elementary particles.