CeOs4Sb12
and CeFe4P12
are classified as Kondo semiconductors, which show coupled changes
in electrical transport, thermodynamic and magnetic properties with a
low-temperature semiconductor-like electrical resistivity. We have carried out
core level and valence band photoemission spectroscopy on single crystal
CeOs4Sb12 and
CeFe4P12 to
study their electronic structure and the evolution of states at the Fermi level as a function of temperature
(∼10–300 K). The Ce 3d core level spectra show the presence of
f0,
f1 and
f2
final states with very different relative intensities in the two compounds.
Single-impurity Anderson model calculations provide f electron counts of
nf = 0.97
and 0.86 per Ce atom, suggestive of a low- and high-TK (= single ion Kondo
temperature) for CeOs4Sb12
and CeFe4P12, respectively. The high-resolution temperature-dependent near-Fermi level spectra show pseudogaps of
energy ∼ 50 meV and ∼ 110 meV in the valence band density of states (DOS) of
CeOs4Sb12 and
CeFe4P12, respectively. The temperature dependence of the DOS at the Fermi level
follows the change in effective magnetic moment estimated from magnetic
susceptibility for both materials, confirming the Kondo nature of the pseudogap in
CeOs4Sb12 and
CeFe4P12. A
compilation of measured pseudogaps using photoemission and optical spectroscopy identifies the charge
gaps ΔC
for Ce-based Kondo semiconductors and provides a direct relation with
TK given
by ΔC ∼ 2kBTK. In conjunction with the known behaviour of the spin gaps
ΔS ∼ kBTK, the results establish the coupled energy scaling of the spin and charge gaps in Kondo
semiconductors.