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Plasma Processing of Functional Thin Films by Sputtering Deposition Using Metal-Based Powder Target

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Published 20 November 2013 Copyright (c) 2013 The Japan Society of Applied Physics
, , Citation Hiroharu Kawasaki et al 2013 Jpn. J. Appl. Phys. 52 11NB07 DOI 10.7567/JJAP.52.11NB07

1347-4065/52/11S/11NB07

Abstract

Titanium-based functional thin films were prepared by a sputtering deposition method using a metal powder target, and the electron density and temperature of the processing plasma were investigated. The electron density of the plasma, measured by a probe method, when using a powder target was higher than that when using a bulk target. The deposition rate when using a powder target was also higher than that in the case of a bulk target. These results may be due to the net-cathode area of the powder target being larger than that of the bulk target. X-ray photoelectron spectroscopy, X-ray diffraction measurements, and atomic force microscopy images of the films prepared using the Ti powder target indicated nearly the same properties as those of films prepared using a Ti bulk target, and the prepared films are oxide. These results suggest that TiO2 thin films can be prepared using a Ti powder target and that the quality is almost the same as those of films prepared using a Ti bulk target.

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10.7567/JJAP.52.11NB07