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ACCEPTED MANUSCRIPT The following article is Open access

Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization

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Accepted Manuscript online 25 April 2024 © 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

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DOI 10.35848/1882-0786/ad43b0

10.35848/1882-0786/ad43b0

Abstract

Stochastic magnetic tunnel junctions (s-MTJs) attract attention as key elements for spintronics-based probabilistic (p-) computers. The performance of p-computers is governed by the time-domain and the time-averaged response of single s-MTJs varying with temperature. Here we present results of the time-domain (rf) voltage and time-averaged (dc) resistance 〈R〉 of s-MTJs with perpendicular magnetization as functions of perpendicular magnetic fields Hz and temperatures T=20-130°C. We observe that both relaxation time (time-domain response) and the slope of the 〈R〉-Hz curve (time-averaged response) decrease with increasing temperature. We discuss the physics underlying these results including the thermally induced spatially non-uniform collective spin dynamics.

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10.35848/1882-0786/ad43b0