Abstract
We have developed the GaN-based distributed feedback laser diode (DFB-LD) with the detuning of +5 nm to obtain smaller temperature dependence of the threshold current. We found that the current-light characteristics almost overlapped up to 300 mW between 25○C and 80○C. The estimated characteristic temperature is about 2550 K. These indicate that our DFB-LD is promising for applications that require small temperature dependence in the output power and oscillation wavelength at constant operation current without precise temperature control.
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