Abstract
Improved p-GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p-GaN surface, leading to an extended depletion region under the same gate bias and thus reducing the electric field. Furthermore, the Schottky barrier height also increases by OCT. Consequently, suppressed gate leakage current and enlarged gate breakdown voltage are achieved. Notably, the maximum applicable gate bias also increases from 4 V to 8.1 V for a 10-year lifetime at a failure rate of 1%.
Export citation and abstract BibTeX RIS
As the Version of Record of this article is going to be / has been published on a gold open access basis under a CC BY 4.0 licence, this Accepted Manuscript is available for reuse under a CC BY 4.0 licence immediately.
Everyone is permitted to use all or part of the original content in this article, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by/4.0
Although reasonable endeavours have been taken to obtain all necessary permissions from third parties to include their copyrighted content within this article, their full citation and copyright line may not be present in this Accepted Manuscript version. Before using any content from this article, please refer to the Version of Record on IOPscience once published for full citation and copyright details, as permissions may be required. All third party content is fully copyright protected and is not published on a gold open access basis under a CC BY licence, unless that is specifically stated in the figure caption in the Version of Record.