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A lateral few electron dot

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Published under licence by IOP Publishing Ltd
, , Citation A S Sachrajda et al 1999 Phys. Scr. 1999 16 DOI 10.1238/Physica.Topical.079a00016

1402-4896/1999/T79/16

Abstract

Recently vertical quantum dots containing just a few electrons have been fabricated and studied. The long sought after "artificial atom" nature of these dots was confirmed in these dramatic experiments. In this paper, however, we describe the fabrication of a lateral few electron quantum dot defined by electrostatic gates over a high mobility 2DEG. We present some of the spectroscopic measurements we have performed on these dots and use them to confirm that the number of electrons in the dot lies between 10 and 20.

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10.1238/Physica.Topical.079a00016