Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO2 Films Using Hf([N(CH3)(C2H5)]3[OC(CH3)3]) Precursor and O3 Oxidant

HfO2 films were deposited by atomic layer deposition (ALD) with a new Hf precursor-Hf([N(CH3)(C2H5)]3[OC(CH3)3]) and O3 as oxidant. The crystallization characteristics of the films were studied using XRD, TEM, AFM, and wet etching test. The results were compared with results from films deposited with Hf [N(CH3)2]4 precursor. The HfO2 films deposited with Hf([N(CH3) (C2H5)]3[OC(CH3)3]) had an amorphous structure after annealing with a temperature below 800 °C under an N2 atmosphere. This caused a difference in the interfacial layer properties and in the electrical performance.