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Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

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Published 21 March 2012 Copyright (c) 2012 The Japan Society of Applied Physics
, , Citation Kyonghwan Oh and Oh-Kyong Kwon 2012 Jpn. J. Appl. Phys. 51 03CD01 DOI 10.1143/JJAP.51.03CD01

1347-4065/51/3S/03CD01

Abstract

A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

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10.1143/JJAP.51.03CD01