Abstract
Carrier transport in a volatile memory device utilizing self-assembled tin dioxide quantum dots (SnO2 QDs) embedded in a polyimide (PI) layer was investigated. Current–voltage (I–V) curves showed that the Ag/PI/SnO2 QDs/PI/indium–tin-oxide (ITO) device memory device had the ability to write, read, and refresh the electric states under various bias voltages. The capacitance–voltage (C–V) curve for Ag/PI/SnO2 QDs/PI/p-Si capacitor exhibited a counterclockwise hysteresis, indicative of the existence of sites occupied by carriers. The origin of the volatile memory effect was attributed to holes trapping in the shallow traps formed between QD and PI matrix, which determines the carrier transport characteristics in the hybrid memory device.